Simone Raoux, Cyril Cabral, et al.
Journal of Applied Physics
The stability of the crystalline phase of binary phase-change Gex Sb1-x films is investigated over a wide range of Ge content. From Raman spectroscopy we find the Ge-Sb crystalline structure irreversibly altered after exposure to a laser beam. We show that with increasing beam intensity/temperature Ge agglomerates and precipitates out in the amount growing with x. A simple empirical relation links Ge precipitation temperature T Ge p to the rate of change d Tcryst /dx of crystallization, with the precipitation easiest on the mid-range x plateau, where Tcryst is nearly constant. Our findings point to a preferable 15%≤x≤50% window, that may achieve the desired cycling/archival properties of a phase-change cell. © 2010 American Institute of Physics.
Simone Raoux, Cyril Cabral, et al.
Journal of Applied Physics
Simone Raoux, Cyril Cabral, et al.
Journal of Applied Physics
Ning Li, Kevin Han, et al.
Advanced Materials
K.N. Chen, Zheng Xu, et al.
3DIC 2012