PaperDopant redistribution during oxidation of SiGeF.K. LeGoues, R. Rosenberg, et al.Applied Physics Letters
PaperNegative differential resistance in nanotube devicesFrançois Léonard, J. TersoffPhysical Review Letters
PaperEvidence for a large valence-band offset at HgTe-CdTe heterojunctionsJ. TersoffPhysical Review B
PaperPrepyramid-to-pyramid transition of SiGe islands on Si(001)A. Rastelli, H. Von Känel, et al.Physical Review B - CMMP