Capacitance-voltage and deep-level-transient spectroscopy characterization of defects near SiO2/SiC interfaces
- A.F. Basile
- John Rozen
- et al.
- 2011
- Journal of Applied Physics
Publications
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119 results for P.M. Mooney
Controllable valley splitting in silicon quantum devices
- Srijit Goswami
- K.A. Slinker
- et al.
- 2006
- Nature Physics
Quantum dots and etch-induced depletion of a silicon two-dimensional electron gas
- L.J. Klein
- K.L.M. Lewis
- et al.
- 2006
- Journal of Applied Physics
Applications of synchrotron X-rays in microelectronics industry research
- Jean L. Jordan-Sweet
- Christophe Detavernier
- et al.
- 2005
- Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
N-channel MOSFETs fabricated on He-implanted and annealed SiGe buffer layers
- P.M. Mooney
- K. Rim
- et al.
- 2005
- Solid-State Electronics
Dislocation-free strained silicon-on-silicon by in-place bonding
- G.M. Cohen
- P.M. Mooney
- et al.
- 2005
- Applied Physics Letters
Fabrication, device design and mobility enhancement of germanium channel MOSFETs
- Huiling Shang
- E. Gousev
- et al.
- 2004
- ICSICT 2004
Spin-based quantum dot quantum computing in silicon
- Mark A. Eriksson
- Mark Friesen
- et al.
- 2004
- Quantum Information Processing
Comparison of large-scale layer-relaxation simulations with experiment
- K.W. Schwarz
- J. Cai
- et al.
- 2004
- Applied Physics Letters
Channel design and mobility enhancement in strained germanium buried channel MOSFETs
- H. Shang
- J.O. Chu
- et al.
- 2004
- VLSI Technology 2004