G.E. Thayer, J.T. Sadowski, et al.
Microscopy and Microanalysis
While the effectiveness of surfactants in suppressing islanding in Si/Ge heteroepitaxial growth has been demonstrated in previous studies, the atomic scale growth processes have remained unknown. Here we present images of the growing Si(001)/Ge surface obtained with in situ low-energy electron microscopy. From our previous we conclude that surfactant-mediated growth of Ge on Si(001) proceeds by highly local Ge incorporation with minimum surface diffusion. We propose a new two-dimer correlated exchange mechanism to explain this unusual growth mode, as well as the absence of islanding at high Ge coverage. © 1992 The American Physical Society.
G.E. Thayer, J.T. Sadowski, et al.
Microscopy and Microanalysis
M. Hammar, F.K. LeGoues, et al.
Surface Science
R.M. Tromp, F.M. Ross, et al.
Physical Review Letters
M.C. Reuter, R.M. Tromp
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films