Benedikt F. Mayer, Stephan Wirths, et al.
IEEE Photonics Technology Letters
We developed Al2O3 and HfO2 plasma-enhanced atomic layer deposition (PEALD) processes as part of the integration of a new high-k/In0.53Ga0.47As gate stack. The Al2O3 featured a bandgap of 7.0 eV and a k-value of 8.1, while the HfO2 presented a bandgap of 6.2 eV and a k-value of 14.6. W/HfO2/Al2O3/n-In0.53Ga0.47As metal-oxide-semiconductor capacitors (MOSCAPs) were fabricated and different In0.53Ga0.47As surface preparations [HF or (NH4)2S] were tested. Both surface preparations revealed similar gate stack electrical performance. Capacitance-voltage (C-V) characteristics yielded very low frequency dispersion near accumulation (as low as 0.3% at Vg = 1 V). Low (<1012/cm2 eV) density of interface traps (Dit) in the upper part of the In0.53Ga0.47As bandgap was also extracted from the high-low frequency C-V and conductance methods, confirming the suitability of PEALD for the integration of high-k dielectrics in n-channel In0.53Ga0.47As field effect transistors.
Benedikt F. Mayer, Stephan Wirths, et al.
IEEE Photonics Technology Letters
Clarissa Convertino, C. B. Zota, et al.
Japanese Journal of Applied Physics
C. B. Zota, Clarissa Convertino, et al.
IEDM 2018
Svenja Mauthe, Heinz Schmid, et al.
OMN 2019