Sub-Thermionic Scalable III-V Tunnel Field-Effect Transistors Integrated on Si (100)
- Clarissa Convertino
- Kirsten E. Moselund
- et al.
- 2019
- IEDM 2019
Publications
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138 results for Daniele Caimi
First cryogenic electro-optic switch on silicon with high bandwidth and low power tunability
- Felix Eltes
- Jorge Barreto
- et al.
- 2018
- IEDM 2018
InGaAs-on-Insulator FinFETs with Reduced Off-Current and Record Performance
- Clarissa Convertino
- C. B. Zota
- et al.
- 2018
- IEDM 2018
High Performance Quantum Well InGaAs-On-Si MOSFETs with sub-20 nm Gate Length for RF Applications
- C. B. Zota
- Clarissa Convertino
- et al.
- 2018
- IEDM 2018
A scaled replacement metal gate InGaAs-on-Insulator n-FinFET on Si with record performance
- Herwig Hahn
- Veeresh Deshpande
- et al.
- 2017
- IEDM 2017
A novel 25 Gbps electro-optic Pockels modulator integrated on an advanced Si photonic platform
- Felix Eltes
- Marcel Kroh
- et al.
- 2017
- IEDM 2017
Advanced 3D Monolithic hybrid CMOS with Sub-50 nm gate inverters featuring replacement metal gate (RMG)-InGaAs nFETs on SiGe-OI Fin pFETs
- Veeresh Deshpande
- V. Djara
- et al.
- 2015
- IEDM 2015
Co-integration of InGaAs n- and SiGe p-MOSFETs into digital CMOS circuits using hybrid dual-channel ETXOI substrates
- Lukas Czornomaz
- N. Daix
- et al.
- 2013
- IEDM 2013
An integration path for gate-first UTB III-V-on-insulator MOSFETs with silicon, using direct wafer bonding and donor wafer recycling
- Lukas Czornomaz
- N. Daix
- et al.
- 2012
- IEDM 2012
Control of interfacial structure and electrical properties in MBE grown single crystalline SrTiO3 gate dielectrics on Si(100)
- Gerd Norga
- Chiara Marchiori
- et al.
- 2006
- MRS Spring Meeting 2006