Lukas Czornomaz, Nicolas Daix, et al.
ISSWB 2014
III-V laser integration on Si is seen as a promising path to overcoming the current interconnect bottleneck in computing. Therefore, III-V lasers need to be integrated with a CMOS-compatible process flow. Furthermore, parasitic elements of the lasers must be minimized while preventing trade-offs to the lasing action (i.e. doping level in the 1018 cm-3). One such parasitic element is the n-type ohmic contact on moderately doped n-InP. A detailed study of CMOS-compatible contacts on n-InP including structural analysis has not yet been performed. To fill this gap, we will comprehensively report on various metal contacts on n-InP that reach a record-low median specific contact resistivity of 6 × 10-8 ω • cm2 and on contacts that show very shallow alloying behavior while still offering a specific contact resistivity in the very low 10-7 ω • cm2 range.
Lukas Czornomaz, Nicolas Daix, et al.
ISSWB 2014
Noelia Vico Triviño, Svenja Mauthe, et al.
ECOC 2020
Stefan Abel, Thilo Stöferle, et al.
ECOC 2015
Benedikt F. Mayer, Stephan Wirths, et al.
CLEO/Europe 2017