Felix Eltes, Daniele Caimi, et al.
IPC 2018
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the physical and chemical properties of the whole multilayered stack. Especially, critical instabilities which may potentially limit the achievement of sub-nanometer capacitance equivalent thickness and a low interface state density are described in detail. Finally we propose some alternative solutions to avoid the observed instability paths. © The Electrochemical Society.
Felix Eltes, Daniele Caimi, et al.
IPC 2018
N. Daix, Lukas Czornomaz, et al.
S3S 2013
Md. Nurul Kabir Bhuiyan, Mariela Menghini, et al.
Journal of Vacuum Science and Technology B
Clarissa Convertino, Kirsten E. Moselund, et al.
IEDM 2019