(Invited) bringing HI-Vs into CMOS: From materials to circuits
Lukas Czornomaz, Veeresh Deshpande, et al.
ECS Meeting 2017 - New Orleans
In0.53Ga0.47As based capacitors and self-aligned transistors fabricated with HfO2/Al2O3/Si gate stacks in a gate-first process flow show promising electrical properties. With in-situ and ex-situ characterization methods, we review systematically the physical and chemical properties of the whole multilayered stack. Especially, critical instabilities which may potentially limit the achievement of sub-nanometer capacitance equivalent thickness and a low interface state density are described in detail. Finally we propose some alternative solutions to avoid the observed instability paths. © The Electrochemical Society.
Lukas Czornomaz, Veeresh Deshpande, et al.
ECS Meeting 2017 - New Orleans
Chiara Marchiori, Ed Kiewra, et al.
Applied Physics Letters
Katharina Schneider, Pol Welter, et al.
Journal of Lightwave Technology
Benedikt F. Mayer, Stephan Wirths, et al.
CLEO/Europe 2017