Magnetotunneling from accumulation layers in AlxGa1-xAs capacitors

T.W. Hickmott

doi:10.1016/0039-6028(86)90454-1

Surface Science

Paper

03 Aug 1986

Magnetotunneling from accumulation layers in Al_xGa_1-xAs capacitors

View publication

Abstract

Observations of magnetic freeze-out, sequential single-phonon emission, and the effect of Landau levels on tunneling from accumulation layers in n--GaAs-undoped AlxGa1-xAs-n+ GaAs capacitors are reviewed. © 1986.

Paper

Electrochemical characterization of adsorption-desorption of the cuprous-suppressor-chloride complex during electrodeposition of copper

John G. Long, Peter C. Searson, et al.

JES

Paper

On the Crystal Structure of Azafullerene (C₅₉N)₂

C.M. Brown, L. Cristofolini, et al.

Chemistry of Materials

Talk

Direct electrical access to the spin manifolds of individual lanthanide atoms

Gregory Czap, Kyungju Noh, et al.

APS Global Physics Summit 2025

Conference paper

Learning Reduced Order Dynamics via Geometric Representations

Imran Nasim, Melanie Weber

SCML 2024

View all publications

Abstract

Related

Electrochemical characterization of adsorption-desorption of the cuprous-suppressor-chloride complex during electrodeposition of copper

On the Crystal Structure of Azafullerene (C59N)2

Direct electrical access to the spin manifolds of individual lanthanide atoms

Learning Reduced Order Dynamics via Geometric Representations

On the Crystal Structure of Azafullerene (C₅₉N)₂