PaperTransverse magnetotunneling in AlxGa1-xAs capacitors. III. Tunneling into interface Landau states in n+-type GaAsT.W. HickmottPhysical Review B
PaperTemperature dependence of the relaxation of injected charge at the polycrystalline-silicon-SiO2 interfaceT.W. HickmottJournal of Applied Physics
Conference paperMAGNETOTUNNELING AND MAGNETIC FREEZEOUT IN n** minus GaAs-UNDOPED Al//xGa//1// minus //xAs minus n** plus GaAs CAPACITORS.T.W. Hickmott, P. Solomon, et al.ICPS Physics of Semiconductors 1984
