S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
We have investigated homoepitaxy on H terminated unreconstructed Si(111) at low temperatures. Epitaxy on the (1 × 1) surface requires growth temperatures about 80°C higher than on the bare surface to achieve similar crystal quality. Even at higher temperatures (300°C to 400°C), where excellent growth is expected, we observe a degradation in the surface ordering on the H terminated surface, not observed for growth on the bare surface. © 1995.
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Michiel Sprik
Journal of Physics Condensed Matter
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures