Shu-Jen Han, Satoshi Oida, et al.
IEEE Electron Device Letters
Depth profiling of graphene with high-resolution ion beam analysis is a practical method for analysis of monolayer thicknesses of graphene. Not only is the energy resolution sufficient to resolve graphene from underlying SiC but by use of isotope labeling it is possible to tag graphene generated from reacted ethylene. Furthermore, we are able to analyze graphene supported by oxidized Si(100) substrates, allowing the study of graphene films grown by chemical vapor deposition on metal and transferred to silicon. This introduces a powerful method to explore the fundamentals of graphene formation. © 2011 American Institute of Physics.
Shu-Jen Han, Satoshi Oida, et al.
IEEE Electron Device Letters
Satoshi Oida, Fenton R. McFeely, et al.
Journal of Applied Physics
Satoshi Oida, James B. Hannon, et al.
Applied Physics Letters
Paul Solomon, Brian A. Bryce, et al.
E3S 2013