Soft x-ray diffraction of striated muscle
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
The electron photo-excitation from the K- state and its subsequent trapping by K+ state is probably at the origin of the silicon dangling bonds (K0) formation during broad-band UV illumination of the N-rich amorphous silicon nitride films. Because the photo-excited electron will move towards the metal electrode the positive charge is expected to accumulate near the nitride-silicon interface with illumination time. Our data also suggest that the N-H group may be at the origin of the nitrogen dangling bonds creation in N-rich films. © 1991 Elsevier Science Publishers B.V. All rights reserved.
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Revanth Kodoru, Atanu Saha, et al.
arXiv