Gallium nitride based LEDs on silicon substrates
N.A. Bojarczuk, S. Guha
Proceedings of SPIE - The International Society for Optical Engineering
Microstructural evaluation of thick (In,Mn)As epitaxial films grown by molecular-beam epitaxy on InAs/GaAs(100) substrates is carried out by transmission electron microscopy (TEM). Films grown at the substrate temperature of Ts=300 °C show the inclusion of MnAs crystallites in the zinc-blende host matrix, in which two types of crystallite morphologies, rod and approximately round shapes, are identified. In contrast, the MnAs crystallites are not observed in films grown at Ts=200 °C, and TEM studies confirm that the films are primarily of zinc-blende structure. Microstructural defects in the films are also discussed to assess the quality of epitaxy.
N.A. Bojarczuk, S. Guha
Proceedings of SPIE - The International Society for Optical Engineering
S. Guha, E. Cartier, et al.
Journal of Applied Physics
S. Guha, H. Munekata, et al.
Journal of Crystal Growth
A. Krol, C.J. Sher, et al.
Surface Science