K.A. Chao
Physical Review B
A variable-energy positron beam was used to study device-quality SiO2 (50-nm thick) grown thermally on the Si(100) surface. The unusual observation of ortho-positronium 3 decay at the interface demonstrates that microvoids >1 nm in size are present, most likely as a consequence of the thermal oxidation process. Other interfacial defects were also observed, illustrating the sensitivity of positron studies for studying interfacial properties. © 1989 The American Physical Society.
K.A. Chao
Physical Review B
S. Cohen, T.O. Sedgwick, et al.
MRS Proceedings 1983
U. Wieser, U. Kunze, et al.
Physica E: Low-Dimensional Systems and Nanostructures
Michiel Sprik
Journal of Physics Condensed Matter