Monolithic integration of InAlAs/InGaAs quantum-well on InP-OI micro-substrates on Si for infrared light sources

We demonstrate for the first time that InAlAs/InGaAs QW can be selectively grown on micron-sized InP-OI substrates, obtained by selective epitaxy in empty oxide cavities on Si. The concept, material and optical characterizations are presented, paving the way towards integrated light sources for infrared applications.