The DX centre
T.N. Morgan
Semiconductor Science and Technology
In this paper we describe the fabrication of oxide based devices similar in architecture to a conventional FRT with source, drain, and gate electrodes and a channel. This distinctive characteristic of our device is the use of a channel material capable of undergoing a field-induced Molt insulator-metal transition at room temperature. Lithographic techniques developed for oxide materials have been combined with pulsed laser deposition of perovskite materials onto single-crystal strontium titanate (STO) substrates to fabricate these devices. Materials chosen for j the Mott transition channel include La2CuO4 (LCO) and YBCO, p-type; and Nd.i, n-type. © 1999 Materials Research Society.
T.N. Morgan
Semiconductor Science and Technology
Mark W. Dowley
Solid State Communications
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings