A high performance phase change memory with fast switching speed and high temperature retention by engineering the Ge xSb yTe z phase change material
- H.Y. Cheng
- T.H. Hsu
- et al.
- 2011
- IEDM 2011
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76 results for Alejandro G. Schrott
A low power phase change memory using thermally confined TaN/TiN bottom electrode
- J.Y. Wu
- Matthew Breitwisch
- et al.
- 2011
- IEDM 2011
The impact of hole-induced electromigration on the cycling endurance of phase change memory
- M. H. Lee
- R. Cheek
- et al.
- 2010
- IEDM 2010
Understanding amorphous states of phase-change memory using frenkel-poole model
- Y.H. Shih
- M.H. Lee
- et al.
- 2009
- IEDM 2009
The influence of nitrogen doping on the chemical and local bonding environment of amorphous and crystalline Ge2Sb2Te 5
- J.S. Washington
- E. Joseph
- et al.
- 2009
- MRS Spring Meeting 2009
Mechanisms of retention loss in Ge2Sb2Te 5-based phase-change memory
- Y.H. Shih
- J.Y. Wu
- et al.
- 2008
- IEDM 2008
Analytical model for RESET operation of phase change memory
- B. Rajendran
- J. Karidis
- et al.
- 2008
- IEDM 2008
Write strategies for 2 and 4-bit multi-level phase-change memory
- T. Nirschl
- J.B. Philipp
- et al.
- 2007
- IEDM 2007
Ultra-thin phase-change bridge memory device using GeSb
- Y.C. Chen
- C.T. Rettner
- et al.
- 2006
- IEDM 2006
Diamondlike carbon materials as low-k dielectrics for multilevel interconnects in ULSI
- A. Grill
- V.V. Patel
- et al.
- 1996
- MRS Fall Meeting 1996