Martín Muñoz, Fred H. Pollak, et al.
Physical Review B - CMMP
The nature of the band bending at semiconductor surfaces (and related carrier type) is an important materials parameter. We demonstrate that an electroreflectance mode which employs a capacitorlike configuration can conveniently be used for this evaluation in a contactless manner. Results will be presented on n- and p-type bulk GaAs, semi-insulating GaAs, nominally undoped In0.15Ga0.85As and n- and p-type GaAs and InP structures with large, almost uniform electric fields.
Martín Muñoz, Fred H. Pollak, et al.
Physical Review B - CMMP
D. Yan, Fred H. Pollak, et al.
Applied Physics Letters
X. Yin, H.-M. Chen, et al.
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
A. Bond, P. Parayanthal, et al.
Cambridge Symposium 1983