B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
A new experimental complimentary metal-oxide semiconductor (CMOS) technology is presented, fabricated with Schottky source and drain and a T-shaped gate. The process results in a significant reduction in the number of steps required to fabricate CMOS, and no longer relies on implantation of the source and drain. The gate resistance and the source/drain contact resistance are very low compared to conventional designs. Performance of 0.25 and 0.15 μm channel length devices has been measured and the technology is readily scalable to sub-0.1 μm dimensions. © 1997 American Vacuum Society.
B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Michiel Sprik
Journal of Physics Condensed Matter
Hiroshi Ito, Reinhold Schwalm
JES
M. Hargrove, S.W. Crowder, et al.
IEDM 1998