Nondestructive depth profiling of carrier lifetimes in full silicon wafers

D. Guidotti; J.S. Batchelder; J.A. Van Vechten; A. Finkel

doi:10.1063/1.96764

Applied Physics Letters

Paper

01 Dec 1986

Nondestructive depth profiling of carrier lifetimes in full silicon wafers

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Abstract

We demonstrate for the first time that the phase shift associated with amplitude modulated, near band-edge photoluminescence from Si at room temperature can be used to map defects and carrier lifetimes over full wafers with depth sensitivity.

Paper

Spatially resolved defect mapping in semiconductors using laser-modulated thermoreflectance

D. Guidotti, H.M. Van Driel

Applied Physics Letters

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First-overtone response in modulated photoluminescence emission in silicon at room temperature

D. Guidotti, J.S. Batchelder, et al.

Physical Review B

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Modeling of luminescence phase delay for nondestructive characterization of Si wafers

D. Guidotti, J.S. Batchelder, et al.

Journal of Applied Physics

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SPIE Applications in Optical Science and Engineering 1992

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Abstract

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Spatially resolved defect mapping in semiconductors using laser-modulated thermoreflectance

First-overtone response in modulated photoluminescence emission in silicon at room temperature

Modeling of luminescence phase delay for nondestructive characterization of Si wafers

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