Deep Compression of Pre-trained Transformer Models
Naigang Wang, Chi-Chun Liu, et al.
NeurIPS 2022
In this paper, an analytical model of intrinsic carbon-nanotube field-effect transistors is presented. The origins of the channel carriers are analyzed in the ballistic limit. A noniterative surface-potential model is developed based on an analytical electrostatic model and a piecewise constant quantum-capacitance model. The model is computationally efficient with no iteration or numerical integration involved, thus facilitating fast circuit simulation and system optimization. Essential physics such as drain-induced barrier lowering and quantum capacitance are captured with reasonable accuracy. © 2010 IEEE.
Naigang Wang, Chi-Chun Liu, et al.
NeurIPS 2022
Lan Wei, Jie Deng, et al.
IEEE Transactions on Electron Devices
Swagath Venkataramani, Jungwook Choi, et al.
IEEE Micro
Hon-Sum Philip Wong, David J. Frank, et al.
Proceedings of the IEEE