Brian L. Ji, Dale J. Pearson, et al.
ICMTS 2008
In this paper, an analytical model of intrinsic carbon-nanotube field-effect transistors is presented. The origins of the channel carriers are analyzed in the ballistic limit. A noniterative surface-potential model is developed based on an analytical electrostatic model and a piecewise constant quantum-capacitance model. The model is computationally efficient with no iteration or numerical integration involved, thus facilitating fast circuit simulation and system optimization. Essential physics such as drain-induced barrier lowering and quantum capacitance are captured with reasonable accuracy. © 2010 IEEE.
Brian L. Ji, Dale J. Pearson, et al.
ICMTS 2008
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IEEE T-ED
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IBM J. Res. Dev
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NeurIPS 2022