R. Ghez, M.B. Small
JES
We analyze the formation of VSi2 at the amorphous-vanadium-silicide/amorphous-Si interface by linear-heating and isothermal calorimetry, and cross-sectional transmission electron microscopy. We show evidence that indicates sporadic VSi2 nucleation with a steady-state nucleation rate after a transient period. The results are contrasted with those obtained for Al3Ni nucleating at the polycrystalline-Al/polycrystalline-Ni interface, where the kinetics appears to be controlled by growth of a fixed number of nuclei at quickly consumed preferred nucleation sites. © 1992, Materials Research Society. All rights reserved.
R. Ghez, M.B. Small
JES
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