Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone. © 1986 The American Physical Society.
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Frank Stem
C R C Critical Reviews in Solid State Sciences
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics