Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
The current-voltage characteristics of Ga1-xAlxAs-GaAs-Ga1-xAlx As double-barrier devices show, in addition to resonant tunneling via quasibound states, well-defined structures corresponding to energies higher than the barrier height. These new features are interpreted as resonant tunneling through confined states in Ga1-xAlxAs, at the X point of the Brillouin zone. © 1986 The American Physical Society.
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics