Conference paper
IR emission from Schottky barrier carbon nanotube FETs
R. Martel, J. Misewich, et al.
DRC 2004
Raman scattering and optical transmission measurements have been made on chemically vapor-deposited Si-rich SiO2 films. The measurements show segregated regions of amorphous silicon in the as-deposited films. Annealing the films at 1150°C completely crystallizes the amorphous silicon. Annealing at lower temperatures produces films with both amorphous and crystalline regions.
R. Martel, J. Misewich, et al.
DRC 2004
D. Arnold, E. Cartier, et al.
Physical Review B
J.A. Kash, J.C. Tsang
Solid State Electronics
D.W. Dong, A. Hartstein
JES