E. Cartier, J.C. Tsang, et al.
Microelectronic Engineering
Paper
On the enhanced electron mobility in strained-silicon inversion layers
Abstract
The calculation of electron mobility in strained-silicon inversion layers accounting for scattering with phonons and interface roughness was studied. The strong carrier confinement in inversion layers removed the sixfold degeneracy of the conduction-band minima. The momentum relaxation rates relative to intravalley scattering with acoustic phonons were treated using the anisotropic model.