T.W. Hickmott, P. Solomon, et al.
ICPS Physics of Semiconductors 1984
It has been observed that an inversion layer cannot form in a p-type silicon substrate when the Fowler-Nordheim tunneling current into the oxide exceeds the minority generation current in the depletion layer. On the other hand, for n-type substrates, the formation of the inversion layer is unaffected by the oxide current.
T.W. Hickmott, P. Solomon, et al.
ICPS Physics of Semiconductors 1984
P. Solomon
Annual Review of Materials Science
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DRC 2001
D. Singh, P. Solomon, et al.
IEDM 2004