Evolving FDTD into a nanophotonics design optimization tool
Geoffrey W. Burr
CLEO 2004
Numerical modeling is used to explain the origin of the large ON/OFF ratios, ultralow leakage, and high ON-current densities exhibited by back-end-of-the-line-friendly access devices based on copper-containing mixed-ionic-electronic-conduction (MIEC) materials. Hall effect measurements confirm that the electronic current is hole dominated; a commercial semiconductor modeling tool is adapted to model MIEC. Motion of large populations of copper ions and vacancies leads to exponential increases in hole current, with a turn-ON voltage that depends on material bandgap. Device simulations match experimental observations as a function of temperature, electrode aspect ratio, thickness, and device diameter.
Geoffrey W. Burr
CLEO 2004
An Chen, Stefano Ambrogio, et al.
EDTM 2020
Atsuya Okazaki, Pritish Narayanan, et al.
ISCAS 2022
Giorgio Cristiano, Massimo Giordano, et al.
Journal of Applied Physics