D. Singh, Keith A. Jenkins, et al.
IEEE Electron Device Letters
Various components for the integration of Monolithic Microwave Integrated Circuits (MMIC's) in a 0.8 μm-BiCMOS silicon technology, such as high-Q spiral inductors and capacitors, broad-band transformers, and varactor diodes are presented and discussed. Inductor Q's of close to 10 at 2 nH inductance have been achieved by shunting multiple interconnect levels together, by sufficient spacing of the inductor structure from the substrate, and by using high substrate resistivity.
D. Singh, Keith A. Jenkins, et al.
IEEE Electron Device Letters
M. Soyuer, J.N. Burghartz, et al.
BCTM 1996
P.F. Lu, S.P. Kowalcyzk, et al.
VLSI-TSA 1997
J.N. Burghartz, T.O. Sedgwick, et al.
BCTM 1993