Alan C. Warren, J.H. Burroughes, et al.
IEEE Electron Device Letters
Single-crystal silicon samples have been made disordered by irradiation with pulses from a frequency-quadrupled neodynium-doped-yttrium-aluminum-garnet laser with 10-8-s pulse length. We have studied the resulting amorphous layer by transmission electron microscopy and He-ion backscattering. Irradiation with longer-wavelength pulses restored the disordered layer to its original crystalline state. This order-disorder laser-radiation-induced transition is repeatable. © 1979 The American Physical Society.
Alan C. Warren, J.H. Burroughes, et al.
IEEE Electron Device Letters
Raphael Tsu, John E. Baglin, et al.
Applied Physics Letters
Paul A. Lebwohl, Raphael Tsu
Journal of Applied Physics
Oliver C. Wells, Francoise K. LeGoues, et al.
Applied Physics Letters