Residual stacking-fault-type contrast in silicon after apparent unfaulting reactions
- T.Y. Tan
- 2008
- Applied Physics Letters
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22 results for T.Y. Tan
Detection of extended interstitial chains in ion-damaged silicon
- T.Y. Tan
- H. Föll
- et al.
- 2008
- Applied Physics Letters
Laser annealing of silicon implanted with both argon and arsenic
- E. Rimini
- W.K. Chu
- et al.
- 2008
- Applied Physics Letters
On the diamond-cubic to hexagonal phase transformation in silicon
- T.Y. Tan
- H. Föll
- et al.
- 2006
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Atomic modelling of homogeneous nucleation of dislocations from condensation of point defects in silicon
- T.Y. Tan
- 2006
- Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Oxygen precipitation retardation and recovery phenomena in Czochralski silicon: Experimental observations, nuclei dissolution model, and relevancy with nucleation issues
- T.Y. Tan
- C.Y. Kung
- 1986
- Journal of Applied Physics
Point defects, diffusion processes, and swirl defect formation in silicon
- T.Y. Tan
- U. Gösele
- 1985
- Applied Physics A Solids and Surfaces
In depth generation lifetime profiling of heat‐treated czochralski silicon
- D. Braunig
- K.H. Yang
- et al.
- 1985
- physica status solidi (a)
POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.
- T.Y. Tan
- U. Gosele
- 1983
- ECS Meeting 1983
POINT DEFECTS AND DIFFUSION PROCESSES IN SILICON.
- T.Y. Tan
- U. Goesele
- 1983
- VLSI Science and Technology 1983