F. Fang, A.B. Fowler, et al.
Surface Science
We have observed a peak in the conductivity-versus-gate-voltage curves for n-channel silicon metal-oxide-semiconductor field-effect-transistor devices containing large oxide-charge densities, 4.7×1011Acm-21.1×1012Acm-2. This peak is interpreted as an oxide-charge-induced impurity level within the lowest sub-band tail. It is found that the impurity level contains one electron state for each oxide charge situated at the Si-SiO2 interface. © 1975 The American Physical Society.
F. Fang, A.B. Fowler, et al.
Surface Science
J.J. Wainer, A.B. Fowler, et al.
Surface Science
A. Hartstein, A.B. Fowler, et al.
Surface Science
G. Timp, A.B. Fowler, et al.
ICPS Physics of Semiconductors 1984