R.M. Tromp, M. Mankos, et al.
Surface Review and Letters
Oxygen transport and incorporation were investigated following postdeposition annealing of metal-oxide-semiconductor structures having ultrathin rhenium films as metal electrode and Hf O2 films as dielectric on Si(001). Isotopic tracing, nuclear reaction analysis, narrow resonant nuclear reaction profiling, and x-ray photoelectron spectroscopy were used to pursue this investigation. For annealing temperatures below 400 °C, oxygen from the gas phase incorporates mainly in near-surface regions of the overlying Re cap. Significant oxygen incorporation into the Hf O2 films is observed only after annealing at 500 °C. The present results are discussed considering that supplying oxygen to the metal/dielectric interface can cause device threshold voltage shifts. © 2006 American Institute of Physics.
R.M. Tromp, M. Mankos, et al.
Surface Review and Letters
M. Copel, K.P. Rodbell, et al.
Applied Physics Letters
V. Narayanan, V.K. Paruchuri, et al.
VLSI Technology 2006
L. Miotti, R.P. Pezzi, et al.
Applied Physics Letters