William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
p-i-n diodes for millimetre wave applications were studied. The diodes were integrated into a BiCMOS technology, permitting monolithic millimetre wave circuits. The impact of process and layout variations on the insertion loss and isolation performance metrics was studied. Devices with an insertion loss of 1 dB and isolation of 17 dB at 60 GHz were obtained. © 2007 IOP Publishing Ltd.
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron
Kenneth R. Carter, Robert D. Miller, et al.
Macromolecules
I.K. Pour, D.J. Krajnovich, et al.
SPIE Optical Materials for High Average Power Lasers 1992
Ellen J. Yoffa, David Adler
Physical Review B