A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications
- John J. Pekarik
- Jim Adkisson
- et al.
- 2014
- BCTM 2014
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12 results for Q. Liu
A novel approach to isolating the edge of the shallow trench isolation in SiGe HBTs for improved device performance
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating fT/fMAX 285GHz/475GHz through simultaneous reduction of base resistance and extrinsic collector capacitance
- Q. Liu
- Jim Adkisson
- et al.
- 2014
- ECSSMEQ 2014
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz f T/fMAX through reduced Rb and Ccb parasitics
- Renata Camillo-Castillo
- Q. Liu
- et al.
- 2013
- BCTM 2013
Improved frequency response in a SiGe npn device through improved dopant activation
- Jim Adkisson
- Marwan H. Khater
- et al.
- 2012
- ECS Meeting 2012
A self-aligned sacrificial emitter process for high performance SiGe HBT in BiCMOS
- Q. Liu
- Jim Adkisson
- et al.
- 2012
- ECS Meeting 2012
A 0.35 μm SiGe BiCMOS technology for power amplifier applications
- Alvin Joseph
- Qizhi Liu
- et al.
- 2007
- BCTM 2007
A BiCMOS technology featuring a 300/330 GHz (fT/fmax) SiGe HBT for millimeter wave applications
- B. Orner
- M. Dahlström
- et al.
- 2006
- BCTM 2006
P-i-n diodes for monolithic millimeter wave BiCMOS applications
- Bradley A. Orner
- Qizhi Liu
- et al.
- 2006
- ISTDM 2006
SiGe HBT BiCMOS technology for millimeter-wave applications
- Alvin Joseph
- Mattias Dahlstrom
- et al.
- 2005
- ISCS 2005