32 NM Logic patterning options with immersion lithography
K. Lai, S. Burns, et al.
SPIE Advanced Lithography 2008
Large-area arrays of parallel quantum wires of 30-80 nm width are achieved using a combination of x-ray lithography, wet chemical etching, and low-pressure metalorganic vapor phase epitaxy. The quantum wires are characterized using low-temperature photoluminescence and magnetotransport measurements. The quantum confinement is reflected in a clear blue shift in the luminescence peak, and in deviation from the periodicity of the Shubnikov-de Haas oscillations as a function of inverse magnetic field.
K. Lai, S. Burns, et al.
SPIE Advanced Lithography 2008
K.Y. Lee, K. Ismail, et al.
Microelectronic Engineering
P.M. Mooney, J.L. Jordan-Sweet, et al.
Applied Physics Letters
S. Washburn, K. Ismail, et al.
Quantum Effect Physics, Electronics and Applications 1992