Scaling opportunities for Gate-All-Around: A patterning perspective
- I. Seshadri
- E. Miller
- et al.
- 2023
- IEDM 2023
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33 results for Martin Burkhardt
22 nm technology compatible fully functional 0.1 μm 2 6T-sram cell
- B. Haran
- A. Kumar
- et al.
- 2008
- IEDM 2008
Impact of high-NA half-field to full-field overlay performance by Monte Carlo simulations
- Romain Lallement
- Daniel Schmidt
- et al.
- 2023
- OEN 2023
EUV sub-resolution assist feature impact: experimental and simulation evaluation
- Zheng Chen
- Martin Burkhardt
- et al.
- 2023
- OEN 2023
Focus considerations of design pitches and absorber choice for EUV random logic
- Martin Burkhardt
- Zheng Chen
- et al.
- 2022
- OEN 2022
Effect of high NA "half-field" printing on overlay error
- Allen Gabor
- Martin Burkhardt
- et al.
- 2021
- SPIE Advanced Lithography 2021
EUV single exposure via patterning at aggressive pitch
- Jing Guo
- Jennifer Church
- et al.
- 2021
- SPIE Advanced Lithography 2021
Fundamental characterization of stochastic variation for improved single-expose EUV patterning at aggressive pitch
- Jennifer Church
- Luciana Meli
- et al.
- 2020
- SPIE Advanced Lithography 2020
Investigation of mask absorber induced image shift in EUV lithography
- Martin Burkhardt
- Anuja De Silva
- et al.
- 2019
- SPIE Advanced Lithography 2019
Investigation of alternate mask absorbers in EUV lithography
- Martin Burkhardt
- 2017
- SPIE Advanced Lithography 2017