Preparation of SrRuO3 films for advanced CMOS metal gates
K. Fröhlich, K. Hušeková, et al.
Materials Science in Semiconductor Processing
The effect of annealing epitaxial La0.5Sr0.5CoO 3-y films in forming gas (FG) mixed with 0.01%, 0.1%, and 1 % mol oxygen was investigated using in situ x-ray diffraction at temperatures up to 800 °C. The phase transition that occurs at 275 °C in pure FG is shifted to higher temperatures by small admixtures of oxygen in FG. Electron diffraction patterns demonstrate that this is a transition into an oxygen-deficient ordered phase with 0,1/3,0 and 0,2/3,0 superstructures. The La0.5Sr0.5CoO3-y phase can be recovered by annealing in oxygen at moderate temperatures as long as it has not decomposed at higher temperatures. © 2006 American Institute of Physics.
K. Fröhlich, K. Hušeková, et al.
Materials Science in Semiconductor Processing
B. Mereu, C. Rossel, et al.
Journal of Applied Physics
D.J. Webb, J. Fompeyrine, et al.
Microelectronic Engineering
C. Rossel, B. Mereu, et al.
Applied Physics Letters