Frank Stem
C R C Critical Reviews in Solid State Sciences
We report the results of low-temperature photoluminescence measurements on a series of heavily-doped Si: As and Si: B samples. New spectra are obtained for very high doping levels (1019 2- 1020 cm-3), and the results for the more lightly doped samples are found to be in good agreement with previously published data. By comparing the luminescence of a Si: As sample before and after partial compensation with B, we verify that minority carriers can be localized even in "metallic" samples. © 1981.
Frank Stem
C R C Critical Reviews in Solid State Sciences
J.A. Barker, D. Henderson, et al.
Molecular Physics
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997