A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
The structure of a near coincidence Ge tilt grain boundary, containing a step, has been derived from a high resolution electron micrograph. There are two possible interpretations of portions of this interface, one of which is the existence of a sheet of fivefold coordinated atoms between the Σ = 19 and Σ= 27 coincidence misorientations. This finding may represent the first experimental evidence that overcoordinated atoms are present at semiconductor grain boundaries free of a screw dislocation. © 1990, Materials Research Society. All rights reserved.
A. Ney, R. Rajaram, et al.
Journal of Magnetism and Magnetic Materials
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
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