Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
The structure of a near coincidence Ge tilt grain boundary, containing a step, has been derived from a high resolution electron micrograph. There are two possible interpretations of portions of this interface, one of which is the existence of a sheet of fivefold coordinated atoms between the Σ = 19 and Σ= 27 coincidence misorientations. This finding may represent the first experimental evidence that overcoordinated atoms are present at semiconductor grain boundaries free of a screw dislocation. © 1990, Materials Research Society. All rights reserved.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Sharee J. McNab, Richard J. Blaikie
Materials Research Society Symposium - Proceedings
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Sung Ho Kim, Oun-Ho Park, et al.
Small