Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
We have studied the effects of very narrow potential barriers on the transport through short one-dimensional GaAs-AlxGa1-xAs wires. The barrier is applied by a 45-nm-wide gate to a nominally 2-m-wide two-dimensional electron gas. The measurements reveal reproducible fluctuations in the transconductance whose origin is unknown. It might be that the fluctuations are associated with the slight disorder in the devices. The possibility that the fluctuations result from transmission resonances is also discussed. © 1988 The American Physical Society.
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Frank R. Libsch, Takatoshi Tsujimura
Active Matrix Liquid Crystal Displays Technology and Applications 1997
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020
K.N. Tu
Materials Science and Engineering: A