EXPERIMENTAL TECHNOLOGY AND CHARACTERIZATION OF SELF-ALIGNED 0. 1 mu M-GATE-LENGTH LOW-TEMPERATURE OPERATION NMOS DEVICES.
- G.A. Sai-Halasz
- M.R. Wordeman
- et al.
- 1986
- IEDM 1986
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59 results for D. Kern
Experimental High Performance Sub-0.1 μm Channel nMOSFET's
- Y. Mii
- S. Rishton
- et al.
- 1994
- IEEE Electron Device Letters
X-ray laser microscopy of rat sperm nuclei
- L. Da Silva
- J.E. Trebes
- et al.
- 1992
- Science
High-resolution imaging by fourier transform X-ray holography
- Ian McNulty
- Janos Kirz
- et al.
- 1992
- Science
Novel Properties of a 0.1-μm-Long Split-Gate MODFET
- K. Ismail
- K.Y. Lee
- et al.
- 1990
- IEEE Electron Device Letters
Zeeman bifurcation of quantum-dot spectra
- W. Hansen
- T.P. Smith
- et al.
- 1989
- Physical Review Letters
Quantized hall effect in the presence of backscattering
- S. Washburn
- A.B. Fowler
- et al.
- 1988
- Physical Review Letters
Inverter Performance Of Deep-Submicrometer Mosfet'S
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
High Transconductance and Velocity Overshoot in NMOS Devices at the 0.1-μm Gate-Length Level
- George A. Sai-Halasz
- Matthew R. Wordeman
- et al.
- 1988
- IEEE Electron Device Letters
Future beam-controlled processing technologies for microelectronics
- Dieter P. Kern
- Thomas F. Kuech
- et al.
- 1988
- Science