M.M. Frank, V.K. Paruchuri, et al.
VLSI-TSA 2005
Surface potential profiles of the junction area of a cleaved n-Si (100) Hf O2 p+ -polycrystalline silicon (poly-Si) gate stack reveal a dipole potential in the oxide, hole trapping at the Hf O2 /poly-Si interface, with the Fermi level ∼0.4 eV below the Si conduction bandedge and enhanced and inhomogeneous hole depletion in the p+ -poly-Si. The dipole accounts for band bending reduction in the n-Si and is consistent with flatband voltage shifts reported for similar gate stacks. © 2005 American Institute of Physics.
M.M. Frank, V.K. Paruchuri, et al.
VLSI-TSA 2005
R. Ludeke, P. Lysaght, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
J.-P. Han, E.M. Vogel, et al.
IEEE Electron Device Letters
E. Cartier, F.R. McFeely, et al.
VLSI Technology 2005