Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Strontium bismuth tantalate (SrBi2.2Ta2O9, SBT) thin films with 1,3, and 8% zirconium content were prepared on Pt/SiO2/Si substrates by chemical solution deposition using a butoxyethanol/ethylhexanoate chemistry. SIMS analysis revealed a uniform distribution of zirconium throughout the doped films. The X-ray diffraction patterns and scanning electron images indicated that the films were polycrystalline and phase pure, except for the 8% Zr composition. An additional diffraction peak, attributed to zirconium oxide, was observed in the 8% Zr thin film. In this composition, the capacitors exhibited low resistance and an absence of ferroelectricity. The measured 2Pr values at 3 V were 11.2, 3.2, and 1.7 μC/cm2 for the 0, 1, and 3% Zr SBT thin films, respectively. The physical and electrical characterization data indicated that zirconium is incorporated in the SBT lattice at amounts up to 3%, but less than 8%. © 1999 OPA (Overseas Publishers Association) N.V. Published by license under the Gordon and Breach Science Publishers imprint.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Surendra B. Anantharaman, Joachim Kohlbrecher, et al.
MRS Fall Meeting 2020