Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
Examination of near-gap low-temperature photoluminescence (PL) from epitaxial, MBE-prepared Si and Si1-xGex alloys, prepared commensurately to (0 0 1) Si, failed to show either free excitons or dopant- bound-excitons in as-prepared layers. Significant luminescence was, however, successfully induced by the selective introduction of two well-known, and moderately shallow, radiation-damage centers (I1 and G) into these epi-layers. Both centers exhibit alloy broadened spectra which, together with detailed PL intensity vs etch depth, indeed demonstrate that the radiative defects are contained well-within the epitaxial layers. © 1991.
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Andreas C. Cangellaris, Karen M. Coperich, et al.
EMC 2001
T.N. Morgan
Semiconductor Science and Technology