FinFET performance advantage at 22nm: An AC perspective
M. Guillorn, J. Chang, et al.
VLSI Technology 2008
The solid-state reaction between a 30-nm-thick Ni film and Ge substrates was investigated using in situ x-ray diffraction, diffuse light scattering, and four-point probe electrical measurements. Our results reveal that Ni 5Ge 3 and NiGe appear consecutively on Ge(111) while they grow simultaneously on amorphous Ge (α-Ge) and Ge(001). Furthermore, phase formation temperatures depend strongly on the nature of the substrate being the lowest on α-Ge and the highest on Ge(111). X-ray pole figure measurements of the NiGe phase obtained from the reaction with an amorphous substrate indicate a completely random texture while several epitaxial and axiotaxial texture components are observed on both Ge(001) and Ge(111). The texturing for the NiGe film on Ge(111), which showed a sequential phase formation, is an order of magnitude more pronounced than for the film on Ge(001) which showed a simultaneous growth. © 2006 American Institute of Physics.
M. Guillorn, J. Chang, et al.
VLSI Technology 2008
C. Detavernier, C. Lavoie, et al.
Journal of Applied Physics
K. De Keyser, C. Detavernier, et al.
Thin Solid Films
C. Lavoie, C. Cabral Jr., et al.
Thin Solid Films