Tailoring dielectric materials for robust BEOL reliability
G. Bonilla, T.M. Shaw, et al.
IRPS 2012
The reactive sticking coefficient, SR, of SiH4 on the Si (111)-(7×7) surface has been studied as a function of hydrogen coverage (ΘH) in the temperature range from 100 to 500 °C. Evidence is seen for two adsorption regimes which are proposed to correspond to minority and majority surface sites. On the minority sites (ΘH=0 to 0.08), SR is approximately 10-5 and essentially no dependence of SR on surface temperature, TS, is found. Reactive sticking becomes a complicated function of TS and ΘH, with SR decreasing, on the majority sites (ΘH≫008). © 1989.
G. Bonilla, T.M. Shaw, et al.
IRPS 2012
S. Gates, S.K. Kulkarni, et al.
Symposium on Process Physics and Modeling in Semiconductor Technology 1990
S. Gates, G. Dubois, et al.
JES
D.B. Beach
IBM J. Res. Dev