Conference paper
Copper interconnect: Fabrication and reliability
C.-K. Hu, J.M.E. Harper
VLSI-TSA 1997
Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration. © 2002 American Institute of Physics.
C.-K. Hu, J.M.E. Harper
VLSI-TSA 1997
C.-K. Hu, D. Canaperi, et al.
IRPS 2004
C.-K. Hu, M.B. Small, et al.
MRS Proceedings 1993
C.-C. Yang, T. Spooner, et al.
IITC 2006