R.F. Liu, C.-K. Hu, et al.
Journal of Applied Physics
Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration. © 2002 American Institute of Physics.
R.F. Liu, C.-K. Hu, et al.
Journal of Applied Physics
J.M.E. Harper, C. Cabral Jr., et al.
Journal of Applied Physics
C.-K. Hu, L. Gignac, et al.
Applied Physics Letters
Takeshi Nogami, J. Maniscalco, et al.
IITC 2010