Conference paper
Effect of impurity on Cu electromigration
C.-K. Hu, Matthew Angyal, et al.
International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration. © 2002 American Institute of Physics.
C.-K. Hu, Matthew Angyal, et al.
International Workshop STRESS-INDUCED PHENOMENA IN METALLIZATION 2010
R. Rosenberg, M. Ohring
Journal of Applied Physics
C.-K. Hu, S. Chang, et al.
VMIC 1985
C.-K. Hu, K.Y. Lee, et al.
Thin Solid Films