Conference paper
Electromigration and diffusion in pure Cu and Cu(Sn) alloys
C.-K. Hu, K.L. Lee, et al.
MRS Spring Meeting 1996
Electromigration in on-chip Cu interconnections with a selective electroless metal coating, CoWP, CoSnP, or Pd, on the top surface of Cu damascene lines has been investigated. The 10-20 nm thick metal cap significantly improves electromigration lifetime by providing protection against interface diffusion of Cu which has been the leading contributor to metal line failure by electromigration. © 2002 American Institute of Physics.
C.-K. Hu, K.L. Lee, et al.
MRS Spring Meeting 1996
C.-K. Hu, L. Gignac, et al.
JES
C.-K. Hu, L. Gignac, et al.
MRS Fall Meeting 2007
R.F. Liu, C.-K. Hu, et al.
Journal of Applied Physics