PaperBand bending and interface states for metals on GaAsR.E. Viturro, J.L. Shaw, et al.Applied Physics Letters
PaperESR and optical absorption studies of ion-implanted siliconB.L. Crowder, R.S. Title, et al.Applied Physics Letters
PaperPersistent photo-conductance and photoquenching of selectively doped Al0.3Ga0.7As GaAs/heterojunctionsM.I. Nathan, T.N. Jackson, et al.Journal of Electronic Materials
PaperUnpinned (100) GaAs surfaces in air using photochemistryS.D. Offsey, J. Woodall, et al.Applied Physics Letters
