Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Uniaxial stress along [111] has been used to vary the different mechanisms contributing to resonance Raman scattering from allowed TO phonons in the region of the E1 gap in InAs. The significant stress-induced splittings and changes in the resonance Raman line shape of the spectral distribution that have been observed are accounted for by a recent model based on phonon modulation of both the energy gap and wave functions. These results provide a strong confirmation of this model. © 1974 The American Physical Society.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Peter J. Price
Surface Science
R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
K.N. Tu
Materials Science and Engineering: A